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Nanofabrication Facility

Nanotech supports nanofabrication research by providing tools and training for academic institutions, industries, and government agencies. The facility features 12,700 square feet of clean room space to do research using state-of-the-art equipment and offers a wide-range of capabilities.

Access Procedure: 

Contact Tom Reynolds to find out more about access and training for the Nanofabrication Facility.

Instruments

  1. Ashers (Technics PEII) »
    Campus Gov't/Academic Industry

    These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si3N4 films.

  2. Atomic Force Microscope (Dimension 3100/Nanoscope IVA) »
    Campus Gov't/Academic Industry

    The Dimension 3100 Nanoman AFM from Veeco provides a variety of high resolution surface imaging techniques and the ability to manipulate or create nanoscale structures directly.

  3. Chemical-Mechanical Polisher (Logitech) »
    Campus Gov't/Academic Industry

    The Logitech Orbis system is used in the facility for fine-scale polishing and planarization of a variety of materials including glass, silicon, GaAs, InP, GaN, etc. Wafers up to 6” diameter can be polished on the system. Several slurries and pads are available to provide a range of polishing options depending on the material being processed. Pieces can also be handled on the system. Each process is often unique in geometry and material combinations so that independent process development is required for most CMP applications.

  4. Contact Aligner (SUSS MA-6) »
    Campus Gov't/Academic Industry

    This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be done with gaps programmable from 0 um to 300 um in 1 um increments.

  5. Critical Point Dryer »
    Campus Gov't/Academic Industry
  6. Custom Reactive Ion Etcher (RIE 1) »
    Campus Gov't/Academic Industry

    The Reactive Ion Etcher #1 is a turbo-pumped plasma deposition system from Sputtered Films that has been modified by the UCSB Nanofabrication Research Facility for chlorine-based reactive ion etching @ 13.56 Mhz. Special features include: a very small volume sample loadlock (for low O2 partial pressure) with integral four inch sample holder and a HeNe laser etch monitor.

  7. Deep UV Optical Microscope (Olympus) »
    Campus Gov't/Academic Industry
  8. Dektak VI Profilometer »
    Campus Gov't/Academic Industry

    The Dektak VI is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The Dektak VI offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool.

  9. Develop Wet Benches (3) »
    Campus Gov't/Academic Industry

    The facility contains 3 polypropylene Developing Benches for photolithographic development using TMAH / TEAH / KOH based developers. All is actively neutralized. The benches consist of two sinks with DI water hook ups and industrial water plenum flushes. Laminar flow fume hoods with hepa filtration. Nitrogen guns are also on both sides of the bench for drying samples. Digital hotplates are included for resist post exposure bakes or post develop hard bakes.

  10. Dicing Saw (ADT) »
    Campus Gov't/Academic Industry

    The ADT 7100 Dicing Saw is optimized for multi-angle dicing of thin, tight tolerance products up to 200 mm x 200 mm. It is currently setup for dicing up to 6” diameter wafers.

     

  11. DUV Flood Expose »
    Campus Gov't/Academic Industry

    About

    This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.

    Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.

  12. E-Beam 1 (Sharon) »
    Campus Gov't/Academic Industry

    About

    The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

  13. E-Beam 1 (Sharon) »
    Campus Gov't/Academic Industry

    The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

  14. E-Beam 2 (Custom) »
    Campus Gov't/Academic Industry

    About

  15. E-Beam 3 (Temescal) »
    Campus Gov't/Academic Industry

    About

  16. E-Beam 4 (CHA) »
    Campus Gov't/Academic Industry

    About

  17. E-Beam Lithography System (JEOL JBX-6300FS) »
    Campus Gov't/Academic Industry

    About

    The 6300FS machine was installed at UCSB in May 2007.

    This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

    The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

  18. Electron-Beam Evaporation System (E-Beam 3) »
    Campus Gov't/Academic Industry

    This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity.

  19. Ellipsometer (Rudolph) »
    Campus Gov't/Academic Industry

    This ellipsometer is a single wavelength (632.8 nm) system for characterization of thin films. The system can determine complex index of refraction constants of substrates (k and n) and can determine the thickness and real part of the index of refraction for thin films on substrates with known optical parameters. The thickness can be measured down to 10s of Angstroms and has an accuracy of about 10A on thickness and 0.01 on index of refraction for SiO2 on Silicon. Thicker films can also be measured.

  20. Field Emission SEM 1 (FEI Sirion) »
    Campus Gov't/Academic Industry

    This system is a tri-use FESEM imaging and inspection system, EDX elemental analysis system, and small-area electron beam lithography system. The system uses a thermal field emission source to provide a stable high beam current that is necessary for ebeam lithography applications. The accelerating voltage can be adjusted from 200V to 30kV. Using the UHR-mode of the imaging system, less than 5 nm features can be resolved at magnifications up to ~1,000,000 in as little as 10-15 minutes for experienced users. The user interface is extremely user friendly.

  21. Film Stress (Tencor Flexus) »
    Campus Gov't/Academic Industry

    The Flexus instrument is used to measure the stress introduced onto a wafer after thin-film deposition by measuring local curvature of a wafer. The system uses a scanning laser detector configuration to measure the surface position of a wafer across its diameter. With automatic rotational control, a 3-D map can also be obtained. By comparing before and after measurements of the sample, the local stress of the sample can be calculated from the local curvature. The stage can also be heated up to 500°C to measure thermal mismatch of the thin films with the substrate.

  22. Finetech Flip-Chip Bonder »
    Campus Gov't/Academic Industry

    The Finetech Fineplacer Lambda tool is designed for flip-chip bonding of two parts with an alignment accuracy of about 0.5um. The system is a semiautomatic bonder with full computer control of the bonding parameters and an integrated side-camera system for observation during the bond. Sample sizes as small as 500um on a side to as large as 50mm on a side can be accommodated. Forces from as small as 0.3N to as large as 500N can be applied to the parts. Bonding temperatures up to 400C are possible.

  23. Fluorescence Microscope (Olympus MX51) »
    Campus Gov't/Academic Industry
  24. GCA 6300 I-Line Wafer Stepper »
    Campus Gov't/Academic Industry

    Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field.

  25. GCA AutoStep 200 I-Line Wafer Stepper »
    Campus Gov't/Academic Industry

    Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field.

  26. Gold Plating Bench »
    Campus Gov't/Academic Industry

    Technic Au Plating System

    The Technic SEMCON 1000 plating system is a single cell plating bath using chemistry suitable for gold plating through vias in resist or on other flat and structured samples with reasonable rates, resistivity, and stress. Films from tenths of a micron to 10s of microns can be plated on a variety of substrate sizes.

  27. Goniometer »
    Campus Gov't/Academic Industry
  28. HF/TMAH Processing Bench »
    Campus Gov't/Academic Industry

    Detailed Specifications

    • 2 Sinks, DI water
    • 2 Nitrogen guns for sample drying
    • Digital hot-plate stirrers
    • Ultrasonic Baths
    • NO SOLVENTS
    • HF Processing limited to these two benches
    • POLOS Spray-Spin-Rinse systems
    • Hepa Filtered Laminar Flow Hoods
  29. High Density ICP PECVD »
    Campus Gov't/Academic Industry

    This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 50°C-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

  30. High Temp Oven (Blue M) »
    Campus Gov't/Academic Industry
  31. Holographic Lith/PL Setup (Custom) »
    Campus Gov't/Academic Industry

    About

  32. ICP Etch 1 (Panasonic E626I) »
    Campus Gov't/Academic Industry

    This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1250 W ICP power, 600 W RF substrate power, and RT-80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, He, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

  33. ICP Etch 2 (Panasonic E640) »
    Campus Gov't/Academic Industry

    This is a three-chamber tool for etching of a variety of materials. Chamber one is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

  34. ICP-Etch (Unaxis VLR) »
    Campus Gov't/Academic Industry

    About

  35. ICP-Etch (Unaxis VLR) »
    Campus Gov't/Academic Industry

    This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue.

  36. Interference Lithography System »
    Campus Gov't/Academic Industry
    The interference lithography system at UCSB uses a 15mW, single-mode, 325 nm HeCd laser that is filtered and expanded by pinhole filters to produce the large area exposure beam. The system uses a simple mirror configuration with a fixed 90 degree angle between the mirror and sample. The entire mirror/sample assembly is rotated in 0.1 degree increments to change the grating pitch from ~ 200 nm to ~ 280 nm (35 to 55 degrees) over an ~ 2 cm x 2 cm exposure area. SPR3001 resist spin-coated to ~ 80 nm thickness is used for grating exposure.
  37. Ion Beam Deposition (Veeco NEXUS) »
    Campus Gov't/Academic Industry

    About

  38. Ion Beam Deposition Tool »
    Campus Gov't/Academic Industry

    This tool is designed for high quality, precise, reproducible deposition of dielectric films for optical quality films. Metallic material is ion bombarded from a target material and a reactive ion beam of oxygen and/or nitrogen is aimed at the surface, creating a metal-oxide or nitride on the sample. The system is fully computer controlled to facilitate multi-layer stack recipes for high reflectivity or low reflectivity coatings. The system is load locked and can handle wafers up to 6” in diameter as well as small pieces.

  39. IR Aligner (SUSS MJB-3 IR) »
    Campus Gov't/Academic Industry

    This is a high-performance mask aligner used for contact exposure processes. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is far into the submicron region. Our left unit is configured for the near-UV window (365 and 405 nm) and both left and right units have the "vacuum contact" option extending resolution to ~0.5 microns. Higher resolution optic systems that can be supplied by Suss are given below.

  40. JEOL 7600F FESEM »
    Campus Gov't/Academic Industry

    The JEOL JSM-7600F FESEM is used for imaging a variety of samples made in the facility.  For general specifications, see the link to the system above.  Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface.  This is especially useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.  The system can accept a 4” wafer, but only 50mm of the wafer is

  41. Karl-Suss MA-BA-6 Mask / Bond Aligner with Backside Optics »
    Campus Gov't/Academic Industry

    This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be done with gaps programmable from 0 um to 300 um in 1 um increments. Automatic wedge compensation is used to ensure that the mask and wafer are parallel. Lithography can be done on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. Programs are stored as recipes on the computer controlled unit.

  42. Laser Scanning Confocal M-scope (Olympus LEXT) »
    Campus Gov't/Academic Industry

    The LEXT OLS4000 3D Laser Measuring Microscope is designed for nanometer level imaging, 3D measurement and roughness measurement. Magnification ranges from 108x - 17,280x satisfy the needs of today's researchers. For a complete description of the tool and its capabilities, please see the above link to the manufacturer’s website.

  43. Load Locked Metal Evaporator Dual Gun (E-Beam 3) »
    Campus Gov't/Academic Industry

    This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity.

  44. Mask Aligner - MJB 3 UV400 »
    Campus Gov't/Academic Industry

    We have three high-performance mask aligners for contact exposure processes. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "L", "R" and "IR" units). Our left and IR units are configured for the near-UV window (365 and 405 nm). Using a filter, these two systems can be configured for I-line (350 nm) only, assisting in resolution. All units have the "vacuum contact" option extending resolution to ~0.7 microns.

  45. Mask Aligner - MJB UV400 IR »
    Campus Gov't/Academic Industry

    This is a high-performance mask aligner used for contact exposure processes. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is far into the submicron region. Our left unit is configured for the near-UV window (365 and 405 nm) and both left and right units have the "vacuum contact" option extending resolution to ~0.5 microns. Higher resolution optic systems that can be supplied by Suss are given below.

  46. Molecular Vapor Deposition System »
    Campus Gov't/Academic Industry

    The Molecular Vapor deposition system is used for deposition of a monolayer-thick fluorocarbon film for producing extremely hydrophobic surfaces used for anti-sticking layers for nanoimprinting or anti-stiction layers for MEMS. The system has integrated Oxygen plasma cleaning for organic removal and surface activation and can be run at temperatures up to 80°C.  Multi-step recipes can be created.  The system is currently configured for FDTS (perflourodecyltricholorsilane) and water to producing the coatings. Up to 6” w

  47. Multi-Wafer Evaporator (E-Beam 4) »
    Campus Gov't/Academic Industry

    This electron-beam evaporation system is the newest of the lab for metal deposition. This system is a bell-jar type system and has the capability to do up to 10-4” wafers in a lift-off configuration and up to 24-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

  48. Nanonex NX2000 Nanoimprinting System »
    Campus Gov't/Academic Industry

    The Nanonex NX2000 is a nanoimprinting system that allows for direct pattern transfer from a pre-fabricated master mold into an underlying polymer material. Lateral feature sizes down to less than 10 nm have been demonstrated on this tool. The system can do thermal imprinting into a polymer at temperatures up to 200°C and chamber pressures up to 600 psi. The system can also imprint into and cure UV-cureable materials on top of underlayer polymers in order to planarize samples and provide for high aspect ratio imprint lithography.

  49. NRC 3117 Three Source Thermal Evaporator »
    Campus Gov't/Academic Industry

    This system is the primary thermal evaporator (tungsten strip or wire resistance heater source boats) in the cleanroom. It complements and augments offered by the Sharon e-beam system in that p-type contacts for III-V compounds such as Zn may only be done here, but it allows for easier access and depositions without the risk of radiation damage for many of the same materials as the e-beam. The system has been upgraded over the years from its original diffusion pump design to now include a cryopump and custom-built electronics for turn-key pumpdown and venting operations.

  50. Optical Film Thickness (Filmetrics) »
    Campus Gov't/Academic Industry

    This tool is for thickness and optical property measurements of films on substrates. The technique used is white light reflection. Data is taken with normal incidence reflection of white light (400 nm – 850 nm) from the surface. The data is modeled and the optical parameters are adjusted to give a best least-squared fit to the data. The accuracy of the technique will depend on the thickness of the film and the optical models used for the fitting of the data.

  51. Optical Film Thickness (Nanometric) »
    Campus Gov't/Academic Industry

    This tool is for thickness and optical property measurements of films on silicon substrates. Other substrates are permitted, but results will not be accurate. The technique used is white light reflection. Data is taken with normal incidence reflection of white light (480 nm – 850 nm) from the surface and spectral data is captured through a spectrometer attached to the camera port of the microscope. The data is modeled and the optical parameters are adjusted to give a best least-squared fit to the data. Refractive index can be manually entered or used as a parameter in the fitting routine.

  52. Optical Microscopes »
    Campus Gov't/Academic Industry

    The fabrication facility offers 5 microscopes for inspection of parts during various steps in the fabrication process. They all have yellow filters for lithography inspection. Several have bright field-dark field capability. One of the Olympus scopes and both Nikon scopes have Nomarski mode for viewing defects and surface features. Objectives range from 2.5x to 150x. All of the microscopes have ProgRes digital cameras for live view and image capture on a Mac-platform. The camera software contains on-picture measurement, white balancing, resolution, and other image manipulation options.

  53. Oven 4 (Fisher) »
    Campus Gov't/Academic Industry
  54. Ovens 1, 2 & 3 (Labline) »
    Campus Gov't/Academic Industry
  55. Oxford FlexAL Atomic Layer Deposition System »
    Campus Gov't/Academic Industry

    The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films. The system currently has metallorganic precursors for Aluminum, Hafnium, Zirconium, and Silicon oxides and nitrides. Water is available for thermal oxides and Oxygen, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.

  56. PECVD 2 (Advanced Vacuum) »
    Campus Gov't/Academic Industry
    This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
     
  57. PECVD Plasma Therm 790 for Oxides and Nitrides »
    Campus Gov't/Academic Industry

    This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure.

  58. Plasma Activation (EVG 810) »
    Campus Gov't/Academic Industry

    This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.

  59. Plasma Clean (Gasonics 2000) »
    Campus Gov't/Academic Industry
     
  60. Plasma Etching Systems »
    Campus Gov't/Academic Industry

    These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si3N4 films. The systems are both equipped with O2 for organic removal. In addition to organic removal, the oxygen plasma is also useful for changing the surface polarity of organic films to facilitate wetting of water-based surface etchants. This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines. One system also has CF4/O2 88% / 12% for etching Si3N4.

  61. Plating Bench »
    Campus Gov't/Academic Industry
  62. Probe Station & Curve Tracer »
    Campus Gov't/Academic Industry

    The probe station in the cleanroom is set up for up to four-point probing of two terminal and three terminal devices. The probe station is a Signatone station with a 2” diameter vacuum chuck. Four probes are provided. The measurements are taken with an HP xxxx 4-point probe measuring system or on a Tektronix 370A programmable curve tracer. The curve tracer can be controlled by a computer to get portable data. FETs, HBTs, diodes, and contact resistance measurements are typically done on this system. The 370A curve tracer is capable of pulsed and DC operation.

  63. QFI Thermal Infrared Microscope »
    Campus Gov't/Academic Industry

    1) The InfraScope is a fault isolation tool for semiconductor failure analysis. The aInfraScope detects thermal infrared photons emitted from hot areas on semiconductor circuits. Such hot spot sites often mark the location of a process fault or damaged location of a circuit, such as a short circuit. The MWIR cameral operates at 2um - 4um wavelength.

  64. Rapid Thermal Processor (AET RX6) »
    Campus Gov't/Academic Industry

    Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Nitrogen, Forming Gas (10%H2 / 90%N2), or Dry Air (~ 10%O2 / ~ 90%N2) can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control.

  65. Resistivity Mapper (CDE RESMAP) »
    Campus Gov't/Academic Industry
    The CDE Resmap 4 point resistivity mapper is used for measuring resistivity across the wafer for substrates and thin films deposited in the facility.  The system can do automated resistivity mapping for pieces to 8 inch wafers.  The resistivity range is 2mOhm/Square to 5MOhm/square.  Contour plots, 3D plots, histograms, data exporting are supported from the Windows XP based control system.
     
  66. RIE Fluorine-Based System (RIE 3) »
    Campus Gov't/Academic Industry

    This is a Materials Research Corporation Reactive Ion Etcher RIE-51 parallel plate, 13.56 MHz system used for etching with fluorine-containing gases (CF4, SF6, and CHF3). The system is used primarily for etching of Si, SiO2, and Si3N4 films. Metals such as tungsten may also be etched. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed DC bias or RF power control and a HeNe laser etch monitor with chart recorder. It is turbo pumped and has no loadlock.

  67. RIE Methane / Hydrogen-Based System (RIE 2) »
    Campus Gov't/Academic Industry

    This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH4/H2/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder.

  68. RIE Programmable, Loadlocked Chlorine Based System (RIE 5) »
    Campus Gov't/Academic Industry

    This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals.

  69. SEM Sample Coater (Hummer) »
    Campus Gov't/Academic Industry
  70. Seven-Target DC/RF Magnetron Sputtering System »
    Campus Gov't/Academic Industry

    The Seven-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc.

  71. Si Deep RIE (PlasmaTherm/Bosch Etch) »
    Campus Gov't/Academic Industry

    About

  72. Si RIE Based Flourine Etcher for Bosch MEMs Processes »
    Campus Gov't/Academic Industry

    The SiRIE system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. This system is dedicated to deep etching in silicon for MEMs structures. The Bosch process is used for obtaining the deep, vertical, high aspect ratio structures. This process cycles between a polymer deposition cycle using C4F8 gas and no substrate bias, and an etching cycle using a SF6 / Ar mixture with substrate bias.

  73. Six-Target DC/RF Magnetron Sputtering System »
    Campus Gov't/Academic Industry

    The Six-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% over 90mm. 2 DC sources and 2 RF sources allow for co-deposition of materials, including dedicated magnetic films Fe, Ni, and Co. Other materials, such as ITO, Si, Al, Zr, etc.

  74. Solvent Cleaning Benches »
    Campus Gov't/Academic Industry

    The facility contains 4 stainless steel solvent benches for general processing using organic solvents. All solvent waste (except for certain chemicals that are collected) are poured into cups and centrally collected. The benches consist of 2 embedded variable power Crest-ultrasonic units, one kept at 70°C for heating resist strippers and the other kept at room temperature for general solvent work. Laminar flow fume hoods with hepa filtration. Nitrogen guns are also on both sides of the bench for drying samples.

  75. Spin Coat Benches (3) »
    Campus Gov't/Academic Industry

    The facility contains 3 stainless steel solvent benches for photoresist spin coating. The benches consist each of 2 integrated Headway PWM32 series photoresist spinners. Overhead and foot controls are provided. 8 preprogrammed recipes and 2 user-programmable recipes are offered. Automatic wafer lifting and centering stations are offered for spinning large wafers up to 8” in diameter. 6” or 8” Cee ultra-flat hotplates with 0.1°C temperature stability are preset for standard resist bake temperatures (90, 95, 100, 105, 110, 115°C). Other user-changeable hot plates are also provided.

  76. Spin Rinse Dryer (SemiTool) »
    Campus Gov't/Academic Industry
  77. Sputter 1 (Custom) »
    Campus Gov't/Academic Industry

    About

  78. Sputter 2 (SFI Endeavor) »
    Campus Gov't/Academic Industry
    This is a three chamber cluster tool for DC and AC reactive sputtering of metals and dielectrics from 8” cylindrical or 2-piece (for AC) targets. The chamber is configured for 4” diameter wafers or equivalently sized plates that can secure smaller piece samples. Samples are loaded into a cassette system capable of holding 20 wafers. The system is computer controlled through a GUI. Heating of the substrate to several hundred degrees Celcius is possible through a heating lamp module. Chamber 1 is set up for AC reactive sputtering of Al, Al2O3, AlN, SiO2, or SiN.
  79. Sputter 3 (AJA ATC 2000-F) »
    Campus Gov't/Academic Industry

    About

  80. Sputter 4 (AJA ATC 2200-V) »
    Campus Gov't/Academic Industry

    About

  81. Sputter 5 (Lesker AXXIS) »
    Campus Gov't/Academic Industry
  82. Step Profilometer (Dektak IIA) »
    Campus Gov't/Academic Industry

    The Dektak is a profilometer for measuring step heights or trench depths on a surface

  83. Stepper 3 (ASML DUV) »
    Campus Gov't/Academic Industry
    The ASML DUV stepper is a 248nm line stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm.  The system is a variable NA system and has a field image size of 21 x 21mm for 0.63 NA and a field size of 22mm x 27mm for 0.4 to 0.57NA.  Overlay accuracy is better than 30nm.  The system is configured for 4” wafers and pieces down to 14mm in size can be exposed using a 4” wafer as a carrier.
     
  84. Strip Annealer »
    Campus Gov't/Academic Industry

    The strip annealer is primarily used for ohmic contact formation on III-V compound semiconductors.

  85. Surface Analysis (KLA/Tencor Surfscan) »
    Campus Gov't/Academic Industry
  86. Suss Aligners (SUSS MJB-3) »
    Campus Gov't/Academic Industry

    We have three high-performance mask aligners for contact exposure processes. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "L", "R" and "IR" units). Our left and IR units are configured for the near-UV window (365 and 405 nm). Using a filter, these two systems can be configured for I-line (350 nm) only, assisting in resolution. All units have the "vacuum contact" option extending resolution to ~0.7 microns.

  87. Thermal Evap 1 »
    Campus Gov't/Academic Industry

    About

  88. Thermal Evap 2 (Solder) »
    Campus Gov't/Academic Industry

    About

    Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.

  89. Three-Target DC/RF Sputtering System »
    Campus Gov't/Academic Industry

    The Three-Target DC/RF Sputtering System, built by Sputtered Films, Inc. is based on the "Research S-Gun" and as such, is capable of high sputtering rates (~ A/min.) for metal, semiconductor and dielectric materials with a minimal substrate bombardment caused by secondary electrons. The deposition chamber is non-loadlocked providing for easy sample loading and target/gun changing. Venting and evacuation are automated with a 500 l/s turbo (capable of pumping O2) achieving an ~ 2 E-7 T ultimate pressure (~ 1E-7 with liquid nitrogen flange pocket) in about 6-8 hours.

  90. Toxic Corrosive Benches »
    Campus Gov't/Academic Industry

    About

  91. Tube Furnace AlGaAs Oxidation (Lindberg) »
    Campus Gov't/Academic Industry
  92. Tube Furnace Oxidation/Annealing System (Tystar) »
    Campus Gov't/Academic Industry

    The three stack Tystar 8” furnace is used primarily for 3 processes. The processes are dedicated for one tube each:

    1.     SOG curing - Tube 1
    2.     Dry or wet oxidation of silicon - Tubes 2 and 3
    3.     General furnace annealing - Tube 3

    Each process tube can accomodate up to one hundred 8” wafers per cycle. We have boats for 2", 3", 4", 6", 8" and irregular shaped pieces. The maximum temperature is 1050°C for the system. Gases used are O2, Steam from DI-H2O, N2.

  93. Tube Furnace Wafer Bonding »
    Campus Gov't/Academic Industry

    This wafer fusion furnace is a custom built unit designed for the fusion of different material types (such InP and Si) to create new heterostructures for novel electronic and optoelectronic devices. Custom made bonding fixtures are loaded into the furnace through a purged glove-box that is oxygen free to below 10 ppm with a dew point near -80°C. The furnace is nitrogen purged and can operate up from 200°C to 1200°C. Many different materials are allowed and maximum temperature is dependent on the materials themselves, to avoid contamination of the furnace.

  94. Tube Furnace Wafer Bonding (Thermco) »
    Campus Gov't/Academic Industry

    About

  95. UV Flood Exposer »
    Campus Gov't/Academic Industry
    This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.
     
    Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.
     
    Equipment Specifications:
    • DUV wavelengths are 200-260 nm; the lamp power is limited to either 1250 or 2100 watts and can operate in either constant intensity or constant power mode
  96. UV Ozone Reactor »
    Campus Gov't/Academic Industry
  97. Vacuum Oven (YES) »
    Campus Gov't/Academic Industry
  98. Vacuum Sealer »
    Campus Gov't/Academic Industry
  99. Vapor HF Etch »
    Campus Gov't/Academic Industry

    The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO2 layer below) with the use of Al2O3, Al or some other metal as an etch mask at 45oC. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N2 gases and can process small sample(s) (on a 8" Si carrier wafer) up to an 8" wafer.

  100. Vector Scan Electron Beam Lithography System »
    Campus Gov't/Academic Industry

    This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

    The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

  101. Wafer Bonder »
    Campus Gov't/Academic Industry

    This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.

  102. Wafer Bonder (SUSS SB6-8E) »
    Campus Gov't/Academic Industry

    About

  103. Wire Saw (Takatori) »
    Campus Gov't/Academic Industry
  104. Woolam Spectroscopic Ellipsometer »
    Campus Gov't/Academic Industry

    The Woolam M2000DI Variable Angle Spectroscopic Ellipsometer is used for the general characterization of optical thin films using ellipsometry.  This tool incorporates a wavelength range from 193nm up to 1650nm and a motorized variable angle control from 45 degrees to 90 degrees in order to provide the widest flexibility for characterization of optical (and some electrical) properties of thin films.

  105. XeF2 Gas Etcher »
    Campus Gov't/Academic Industry

    The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF2 (no plasma enhancement or heating is needed) with the use of photoresist or SiO2 or Al as an etch mask at room temperature. For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab. The XeF2 etch process is a purely chemical one and usually results in a rough etched surface.