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High Density ICP PECVD

Instrument types
Make / Model : 
Unaxis VLR

This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 50°C-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

Technical Primary Contact:
Tony Bosch

Access Procedure: 

Contact Tom Reynolds to find out more about access and training for the Nanofabrication Facility.