The Flexus instrument is used to measure the stress introduced onto a wafer after thin-film deposition by measuring local curvature of a wafer. The system uses a scanning laser detector configuration to measure the surface position of a wafer across its diameter. With automatic rotational control, a 3-D map can also be obtained. By comparing before and after measurements of the sample, the local stress of the sample can be calculated from the local curvature. The stage can also be heated up to 500°C to measure thermal mismatch of the thin films with the substrate.
Contact Tom Reynolds to find out more about access and training for the Nanofabrication Facility.